The 3SK41 is a silicon N-channel dual-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced primarily by Hitachi (now Renesas) and later by NEC. Unlike a standard JFET or single-gate MOSFET, the dual-gate architecture offers a unique advantage: it combines the low-noise characteristics of a JFET with the automatic gain control (AGC) capability of a bipolar transistor.
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VBR(DSS)cap V sub cap B cap R open paren cap D cap S cap S close paren end-sub Maximum breakdown voltage across drain and source 3sk41 datasheet
Restorers of vintage gear report that the 3SK41 is susceptible to several types of failure, most often due to its age and the fragile nature of early MOSFET gates.
): Crucial for stability, this value is exceptionally low (around 0.02 pF to 0.03 pF). This minimal feedback capacitance is what allows the 3SK41 to amplify UHF signals stably without self-oscillating. 5. How the Dual-Gate Structure Works in Circuit Design The 3SK41 is a silicon N-channel dual-gate MOSFET
Whether you need a for biasing the dual gates.
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It is currently considered an obsolete or "hard-to-find" part but can still be sourced through specialty electronic distributors like Jotrin Electronics
The 3SK41’s two gate terminals are its defining feature. In a typical dual‑gate MOSFET, is the input that receives the RF signal to be amplified, while Gate 2 is used for a control voltage. By varying the voltage on Gate 2, the circuit can adjust the transistor’s gain, a technique known as Automatic Gain Control (AGC) in receivers. This allowed radio designers to build simpler and more sensitive front‑ends for FM tuners without relying on variable attenuators or multi‑stage control loops.
Exceeding these ratings, even momentarily, will destroy the device.